Graphene-based resonant-tunneling structures

Resonant tunneling and intrinsic bistability in twisted graphene structures

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I -V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and...

Resonant tunneling in graphene pseudomagnetic quantum dots.

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...

9 Resonant Tunneling in Quantum Structures

Resonant tunneling-based spin ratchets

We outline a generic ratchet mechanism for creating directed spin-polarized currents in ac-driven double well or double dot structures by employing resonant spin transfer through the system engineered by local external magnetic fields. We show its applicability to semiconductor nanostructures by considering coherent transport through two coupled lateral quantum dots, where the energy levels of ...

Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potenti...